Invention Grant
- Patent Title: Semiconductor triode
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Application No.: US16230137Application Date: 2018-12-21
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Publication No.: US11462624B2Publication Date: 2022-10-04
- Inventor: Samuel Menard
- Applicant: STMICROELECTRONICS (TOURS) SAS
- Applicant Address: FR Tours
- Assignee: STMICROELECTRONICS (TOURS) SAS
- Current Assignee: STMICROELECTRONICS (TOURS) SAS
- Current Assignee Address: FR Tours
- Agency: Seed IP Law Group LLP
- Priority: FR1850084 20180105
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L29/47 ; H01L29/73 ; H01L29/747 ; H01L29/74 ; H01L29/732 ; H01L29/417 ; H01L29/45
Abstract:
A vertical semiconductor triode includes a first layer of semiconductor material, the first layer including first and second surfaces, the first surface being in contact with a first electrode forming a Schottky contact.
Public/Granted literature
- US20190214476A1 SEMICONDUCTOR TRIODE Public/Granted day:2019-07-11
Information query
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