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US11476389B2 Method for producing an optoelectronic semiconductor chip having structures at the radiation passage surface, and optoelectronic semiconductor chip having structures at the radiation passage surface 有权

Method for producing an optoelectronic semiconductor chip having structures at the radiation passage surface, and optoelectronic semiconductor chip having structures at the radiation passage surface
Abstract:
The invention relates to a method for producing an optoelectronic semiconductor chip comprising the following steps: providing a semiconductor body (1) having a radiation-permeable surface (1a), and introducing structures (2) into the semiconductor body (1) on the radiation-permeable surface (1a), wherein the structures (2) are quasi-regular.
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