Invention Grant
- Patent Title: Method and system for wafer defect inspection
-
Application No.: US17086281Application Date: 2020-10-30
-
Publication No.: US11513079B2Publication Date: 2022-11-29
- Inventor: Roger Alvis , John Fretwell , Laurens Kwakman , Tomas Vystavel
- Applicant: FEI Company
- Applicant Address: US OR Hillsboro
- Assignee: FEI Company
- Current Assignee: FEI Company
- Current Assignee Address: US OR Hillsboro
- Agency: Klarquist Sparkman, LLP
- Main IPC: G01N21/95
- IPC: G01N21/95 ; G01N21/88 ; G06T7/00

Abstract:
Methods for locating and characterizing defects can include performing a first scan of a substrate to produce a first defect map including a first set of coordinates of one or more defects of the substrate and performing a second scan of one or more regions of the substrate associated with the defects based on the first defect map to produce one or more electron channeling contrast (ECC) images of the defects. Characterization of the defects can be based on the ECC images alone or in combination with other techniques. Such methods can include determining a second set of coordinates associated with the one or more defects based on the ECC images and directing an ion beam toward the substrate and milling the substrate based on the second set of coordinates.
Public/Granted literature
- US20220113262A1 METHOD AND SYSTEM FOR WAFER DEFECT INSPECTION Public/Granted day:2022-04-14
Information query