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    Fabrication of a Malleable Lamella for Correlative Atomic-Resolution Tomographic Analyses
    2.
    发明申请
    Fabrication of a Malleable Lamella for Correlative Atomic-Resolution Tomographic Analyses 审中-公开
    用于相关原子分辨率断层扫描分析的可塑性薄片的制造

    公开(公告)号：US20150253353A1

    公开(公告)日：2015-09-10

    申请号：US14627770

    申请日：2015-02-20

    Applicant: FEI Company

    Inventor： Roger Alvis

    IPC: G01Q30/02 ,  G01Q30/20

    CPC classification number: G01Q30/02 ,  G01N1/00 ,  G01N1/32 ,  G01N2001/282 ,  G01Q30/20 ,  H01J37/285 ,  H01J2237/2802 ,  H01J2237/2852 ,  H01J2237/31745 ,  H01J2237/31749 ,  Y10T428/2933 ,  Y10T428/2958

    Abstract: A method of forming a sample and performing correlative S/TEM and APM analysis is provided wherein a sample containing a region of interest is cut from a bulk of sample material and formed into an ultra-thin lamella. The lamella is then analyzed with an S/TEM to form an image. The lamella sample and mount may then go through a cleaning process to remove any contamination. The lamella containing the ROI is then embedded within a selected material and is formed into a needle-shaped sample. The needle-shaped sample is then analyzed with the APM and the resulting data is merged and correlated with the S/TEM data.

    Abstract translation: 提供形成样品并进行相关S / TEM和APM分析的方法，其中从大量样品材料切割包含感兴趣区域的样品并形成超薄层。 然后用S / TEM分析薄片以形成图像。 然后，薄片样品和底座可以通过清洁过程去除任何污染物。 然后将含有ROI的薄片嵌入所选择的材料中并形成针状样品。 然后用APM分析针状样品，并将所得数据合并并与S / TEM数据相关。

    Method and system for wafer defect inspection
    3.
    发明授权
    Method and system for wafer defect inspection 有权

    公开(公告)号：US11513079B2

    公开(公告)日：2022-11-29

    申请号：US17086281

    申请日：2020-10-30

    Applicant: FEI Company

    Inventor： Roger Alvis ,  John Fretwell ,  Laurens Kwakman ,  Tomas Vystavel

    IPC: G01N21/95 ,  G01N21/88 ,  G06T7/00

    Abstract: Methods for locating and characterizing defects can include performing a first scan of a substrate to produce a first defect map including a first set of coordinates of one or more defects of the substrate and performing a second scan of one or more regions of the substrate associated with the defects based on the first defect map to produce one or more electron channeling contrast (ECC) images of the defects. Characterization of the defects can be based on the ECC images alone or in combination with other techniques. Such methods can include determining a second set of coordinates associated with the one or more defects based on the ECC images and directing an ion beam toward the substrate and milling the substrate based on the second set of coordinates.

    METHOD AND SYSTEM FOR WAFER DEFECT INSPECTION
    4.
    发明申请
    METHOD AND SYSTEM FOR WAFER DEFECT INSPECTION 有权

    公开(公告)号：US20220113262A1

    公开(公告)日：2022-04-14

    申请号：US17086281

    申请日：2020-10-30

    Applicant: FEI Company

    Inventor： Roger Alvis ,  John Fretwell ,  Laurens Kwakman ,  Tomas Vystavel

    IPC: G01N21/95 ,  G01N21/88 ,  G06T7/00

    Abstract: Methods for locating and characterizing defects can include performing a first scan of a substrate to produce a first defect map including a first set of coordinates of one or more defects of the substrate and performing a second scan of one or more regions of the substrate associated with the defects based on the first defect map to produce one or more electron channeling contrast (ECC) images of the defects. Characterization of the defects can be based on the ECC images alone or in combination with other techniques. Such methods can include determining a second set of coordinates associated with the one or more defects based on the ECC images and directing an ion beam toward the substrate and milling the substrate based on the second set of coordinates.

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