The flip-chip light emitting diode structure includes a substrate, a first patterned current blocking layer, a second patterned current blocking layer, a first semiconductor layer, an active layer and a second semiconductor layer. The first patterned current blocking layer is disposed on the substrate. The second patterned current blocking layer is disposed on the first patterned current blocking layer, in which the first patterned current blocking layer and the second patterned current blocking layer are located on different planes, and patterns of the first patterned current blocking layer and patterns of the second current blocking layer are substantially complementary. The first semiconductor layer is disposed on the second patterned current blocking layer. The active layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the active layer, in which electrical properties of the second semiconductor layer and the first semiconductor layer are different.