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公开(公告)号：US12119427B2
公开(公告)日：2024-10-15
申请号：US18336040
申请日：2023-06-16
Applicant: Lextar Electronics Corporation
Inventor： Jih-Kang Chen , Shih-Wei Yang , Tsai-Chen Sung
CPC classification number: H01L33/382 , H01L27/156 , H01L33/22 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62
Abstract: The light emitting device includes a growth substrate, a light-emitting semiconductor structure, conductive pillars, an insulating layer, and first and second electrodes. The light-emitting semiconductor structure includes a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer disposed on the growth substrate from top to bottom. The conductive pillars are disposed in the light-emitting semiconductor structure. The conductive pillars penetrates is in contact with the second-type semiconductor layer and electrically connected to the substrate. A first portion of the insulating layer is disposed between the first-type semiconductor layer and the substrate, and a second portion of the insulating layer electrically insulates the first-type semiconductor layer and the light emitting-layer from the conductive pillars. The first electrode is electrically connected to the first-type semiconductor layer and electrically insulated from the conductive pillars. The second electrode is electrically connected to the conductive pillar.
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公开(公告)号：US11515447B2
公开(公告)日：2022-11-29
申请号：US17027685
申请日：2020-09-21
Applicant: Lextar Electronics Corporation
Inventor： Jih-Kang Chen , Shih-Wei Yang
Abstract: The flip-chip light emitting diode structure includes a substrate, a first patterned current blocking layer, a second patterned current blocking layer, a first semiconductor layer, an active layer and a second semiconductor layer. The first patterned current blocking layer is disposed on the substrate. The second patterned current blocking layer is disposed on the first patterned current blocking layer, in which the first patterned current blocking layer and the second patterned current blocking layer are located on different planes, and patterns of the first patterned current blocking layer and patterns of the second current blocking layer are substantially complementary. The first semiconductor layer is disposed on the second patterned current blocking layer. The active layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the active layer, in which electrical properties of the second semiconductor layer and the first semiconductor layer are different.
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公开(公告)号：US12113152B2
公开(公告)日：2024-10-08
申请号：US17246693
申请日：2021-05-02
Applicant: Lextar Electronics Corporation
Inventor： Jih-Kang Chen , Shih-Wei Yang , Tsai-Chen Sung
CPC classification number: H01L33/382 , H01L27/156 , H01L33/22 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62
Abstract: The light emitting device includes a substrate, a light-emitting semiconductor structure, conductive pillars, an insulating layer, and first and second electrodes. The light-emitting semiconductor structure includes a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer disposed on the substrate from bottom to top. The conductive pillars are disposed in the light-emitting semiconductor structure. The conductive pillars penetrates is in contact with the second-type semiconductor layer and electrically connected to the substrate. A first portion of the insulating layer is disposed between the first-type semiconductor layer and the substrate, and a second portion of the insulating layer electrically insulates the first-type semiconductor layer and the light emitting-layer from the conductive pillars. The first electrode is electrically connected to the first-type semiconductor layer and electrically insulated from the conductive pillars. The second electrode is electrically connected to the conductive pillar.
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公开(公告)号：US11811001B2
公开(公告)日：2023-11-07
申请号：US18051019
申请日：2022-10-31
Applicant: Lextar Electronics Corporation
Inventor： Jih-Kang Chen , Shih-Wei Yang
CPC classification number: H01L33/145 , H01L33/46 , H01L33/52 , H01L33/0012 , H01L33/32 , H01L33/382 , H01L2933/0016 , H01L2933/0025
Abstract: The forming method of a flip-chip light emitting diode structure includes the following steps. A first substrate including a first semiconductor layer, an active layer on the first semiconductor layer and a second semiconductor layer on the active layer is provided. A first current blocking layer is formed on the second semiconductor layer, in which the first current blocking layer has a plurality of interspaces. A reflective layer covering the interspaces is formed, in which the reflective layer has a plurality of recesses, and each of the recesses is corresponding to each of the interspaces. A second current blocking layer filling into the recesses is formed.
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