Invention Grant
- Patent Title: Ion implantation gas supply system
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Application No.: US17356100Application Date: 2021-06-23
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Publication No.: US11527382B2Publication Date: 2022-12-13
- Inventor: Hsing-Piao Hsu , Nai-Han Cheng , Ping-Chih Ou
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H01J37/317
- IPC: H01J37/317 ; C23C14/48 ; H01J37/08 ; F17C13/04

Abstract:
The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.
Public/Granted literature
- US20210319978A1 ION IMPLANTATION GAS SUPPLY SYSTEM Public/Granted day:2021-10-14
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