- Patent Title: Stacked integration of III-N transistors and thin-film transistors
-
Application No.: US16243344Application Date: 2019-01-09
-
Publication No.: US11538804B2Publication Date: 2022-12-27
- Inventor: Han Wui Then , Marko Radosavljevic , Sansaptak Dasgupta , Paul B. Fischer , Walid M. Hafez
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Akona IP PC
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/20 ; H01L29/423 ; H01L29/786 ; H01L29/205 ; H01L21/8252 ; H01L23/34 ; H01L29/66 ; H01L29/778 ; H01L27/092

Abstract:
Disclosed herein are integrated circuit (IC) structures, packages, and devices that include thin-film transistors (TFTs) integrated on the same substrate/die/chip as III-N transistors. One example IC structure includes an III-N transistor in a first layer over a support structure (e.g., a substrate) and a TFT in a second layer over the support structure, where the first layer is between the support structure and the second layer. Another example IC structure includes a III-N semiconductor material and a TFT, where at least a portion of a channel material of the TFT is over at least a portion of the III-N semiconductor material.
Public/Granted literature
- US20200219877A1 STACKED INTEGRATION OF lll-N TRANSISTORS AND THIN-FILM TRANSISTORS Public/Granted day:2020-07-09
Information query
IPC分类: