Invention Grant
- Patent Title: Semiconductor device and manufacturing method of semiconductor device
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Application No.: US16872032Application Date: 2020-05-11
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Publication No.: US11574920B2Publication Date: 2023-02-07
- Inventor: Byung Woo Kang , Sae Jun Kwon , Seung Min Lee , Hwal Pyo Kim , Jin Taek Park , Seung Woo Han , Young Ock Hong
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2019-0118246 20190925
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11556 ; H01L27/24
Abstract:
A semiconductor device includes: a stack structure including a cell region and a contact region; a channel structure penetrating the cell region of the stack structure; trenches penetrating the contact region of the stack structure to different depths; and a stop structure penetrating the contact region of the stack structure, the stop structure being located between the trenches.
Public/Granted literature
- US20210091109A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2021-03-25
Information query
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