公开(公告)号：US11587941B2

公开(公告)日：2023-02-21

申请号：US16850591

申请日：2020-04-16

Applicant: SK hynix Inc.

Inventor： Byung Woo Kang ,  Sae Jun Kwon ,  Hwal Pyo Kim ,  Jin Taek Park ,  Yang Seok Lim ,  Young Ock Hong

IPC: H01L27/11556 ,  H01L27/11582 ,  H01L21/822 ,  H01L21/762 ,  H01L21/8234

Abstract: A method of manufacturing a semiconductor device includes forming a stacked structure including trenches having different depths, forming an insulating layer on the stacked structure to fill the trenches, and forming a plurality of protrusions located corresponding to locations of the trenches by patterning the insulating layer. The method also includes forming insulating patterns filling the trenches, respectively, by planarizing the patterned insulating layer including the plurality of protrusions.

公开(公告)号：US11973022B2

公开(公告)日：2024-04-30

申请号：US16917410

申请日：2020-06-30

Applicant: SK hynix Inc.

Inventor： Sang Yong Lee ,  Sae Jun Kwon ,  Sang Min Kim ,  Jin Taek Park ,  Sang Hyun Oh

IPC: H01L23/52 ,  H01L23/48 ,  H01L23/522 ,  H01L27/11582 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35

CPC classification number: H01L23/5226 ,  H01L23/481 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35

Abstract: A semiconductor device includes a line; a source structure on the line; a stack structure on the source structure; a first slit structure penetrating the stack structure; a second slit structure penetrating the stack structure; and a contact plug adjacent to the first slit structure in a first direction. The first slit structure and the second slit structure may be spaced apart from each other by a first distance in a second direction that is perpendicular to the first direction. The contact plug penetrates the source structure, the contact plug being electrically connected to the lower line. The first slit structure and the contact plug may be spaced apart from each other by a second distance in the first direction, and the second distance may be longer than the first distance.

公开(公告)号：US12014978B2

公开(公告)日：2024-06-18

申请号：US16917410

申请日：2020-06-30

Applicant: SK hynix Inc.

Inventor： Sang Yong Lee ,  Sae Jun Kwon ,  Sang Min Kim ,  Jin Taek Park ,  Sang Hyun Oh

IPC: H01L23/52 ,  H01L23/48 ,  H01L23/522 ,  H01L27/11582 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35

CPC classification number: H01L23/5226 ,  H01L23/481 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35

Abstract: A semiconductor device includes a line; a source structure on the line; a stack structure on the source structure; a first slit structure penetrating the stack structure; a second slit structure penetrating the stack structure; and a contact plug adjacent to the first slit structure in a first direction. The first slit structure and the second slit structure may be spaced apart from each other by a first distance in a second direction that is perpendicular to the first direction. The contact plug penetrates the source structure, the contact plug being electrically connected to the lower line. The first slit structure and the contact plug may be spaced apart from each other by a second distance in the first direction, and the second distance may be longer than the first distance.

公开(公告)号：US11574920B2

公开(公告)日：2023-02-07

申请号：US16872032

申请日：2020-05-11

Applicant: SK hynix Inc.

Inventor： Byung Woo Kang ,  Sae Jun Kwon ,  Seung Min Lee ,  Hwal Pyo Kim ,  Jin Taek Park ,  Seung Woo Han ,  Young Ock Hong

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/24

Abstract: A semiconductor device includes: a stack structure including a cell region and a contact region; a channel structure penetrating the cell region of the stack structure; trenches penetrating the contact region of the stack structure to different depths; and a stop structure penetrating the contact region of the stack structure, the stop structure being located between the trenches.