Invention Grant
- Patent Title: X-ray reflectometry apparatus and method thereof for measuring three dimensional nanostructures on flat substrate
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Application No.: US17037115Application Date: 2020-09-29
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Publication No.: US11579099B2Publication Date: 2023-02-14
- Inventor: Chun-Ting Liu , Wen-Li Wu , Bo-Ching He , Guo-Dung Chen , Sheng-Hsun Wu , Wei-En Fu
- Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Applicant Address: TW Hsinchu
- Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: TW109123688 20200714
- Main IPC: G01N23/20
- IPC: G01N23/20 ; G01N23/20008 ; G01N23/2206 ; G01N23/223 ; G01N23/2273

Abstract:
This disclosure relates to an apparatus and methods for applying X-ray reflectometry (XRR) in characterizing three dimensional nanostructures supported on a flat substrate with a miniscule sampling area and a thickness in nanometers. In particular, this disclosure is targeted for addressing the difficulties encountered when XRR is applied to samples with intricate nanostructures along all three directions, e.g. arrays of nanostructured poles or shafts. Convergent X-ray with long wavelength, greater than that from a copper anode of 0.154 nm and less than twice of the characteristic dimensions along the film thickness direction, is preferably used with appropriate collimations on both incident and detection arms to enable the XRR for measurements of samples with limited sample area and scattering volumes.
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