Invention Grant
- Patent Title: Low resistivity DRAM buried word line stack
-
Application No.: US17335287Application Date: 2021-06-01
-
Publication No.: US11587936B2Publication Date: 2023-02-21
- Inventor: Yixiong Yang , Jacqueline S. Wrench , Yong Yang , Srinivas Gandikota , Annamalai Lakshmanan , Joung Joo Lee , Feihu Wang , Seshadri Ganguli
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/285 ; C23C16/455 ; H01L21/02 ; H01L21/8234
Abstract:
Methods for DRAM device with a buried word line are described. The method includes forming a metal cap layer and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.
Public/Granted literature
- US20220278108A1 Low Resistivity DRAM Buried Word Line Stack Public/Granted day:2022-09-01
Information query
IPC分类:
