Invention Grant
- Patent Title: Semiconductor package structure and method for manufacturing the same
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Application No.: US16852259Application Date: 2020-04-17
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Publication No.: US11605597B2Publication Date: 2023-03-14
- Inventor: Hsu-Nan Fang , Chun-Jun Zhuang
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L23/31 ; H01L23/00 ; H01L21/56 ; H01L23/18 ; H01L27/148
Abstract:
A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a first passivation layer, a first metal layer and a first semiconductor die. The first metal layer is embedded in the first passivation layer. The first metal layer defines a first through-hole. The first semiconductor die is disposed on the first passivation layer.
Public/Granted literature
- US20210327819A1 SEMICONDUCTOR PACKAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2021-10-21
Information query
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