Invention Grant
- Patent Title: High electron mobility transistor
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Application No.: US17191598Application Date: 2021-03-03
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Publication No.: US11610989B2Publication Date: 2023-03-21
- Inventor: Chun-Ming Chang , Chun-Liang Hou , Wen-Jung Liao
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201910710859.4 20190802
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L21/306 ; H01L29/20 ; H01L29/66
Abstract:
The present disclosure provides a high electron mobility transistor (HEMT) including a substrate; a buffer layer over the substrate; a GaN layer over the buffer layer; a first AlGaN layer over the GaN layer; a first AlN layer over the first AlGaN layer; a p-type GaN layer over the first AlN layer; and a second AlN layer on the p-type GaN layer.
Public/Granted literature
- US20210193824A1 HIGH ELECTRON MOBILITY TRANSISTOR Public/Granted day:2021-06-24
Information query
IPC分类:
