Invention Grant
- Patent Title: Drive circuit and semiconductor device
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Application No.: US17717320Application Date: 2022-04-11
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Publication No.: US11611340B2Publication Date: 2023-03-21
- Inventor: Naoki Ikeda
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JPJP2021-122545 20210727
- Main IPC: H02M1/08
- IPC: H02M1/08 ; H02M1/32 ; H03K17/16 ; H03K17/567 ; H03K17/687 ; H03K17/04

Abstract:
A drive circuit includes a second drive circuit that drives a semiconductor switching element in a case where a pulse width of a corresponding signal is determined to be larger than a second threshold, and a timing adjustment circuit that adjusts a timing at which the second drive circuit cooperates with a first drive circuit to drive the semiconductor switching element during a turn-off period of the semiconductor switching element due to drive of the first drive circuit.
Public/Granted literature
- US20230032193A1 DRIVE CIRCUIT AND SEMICONDUCTOR DEVICE Public/Granted day:2023-02-02
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