Invention Grant
- Patent Title: Micro light-emitting diode display
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Application No.: US17128183Application Date: 2020-12-20
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Publication No.: US11616168B2Publication Date: 2023-03-28
- Inventor: Yen-Yeh Chen , Chih-Ling Wu
- Applicant: PlayNitride Display Co., Ltd.
- Applicant Address: TW MiaoLi County
- Assignee: PlayNitride Display Co., Ltd.
- Current Assignee: PlayNitride Display Co., Ltd.
- Current Assignee Address: TW MiaoLi County
- Agency: JCIPRNET
- Priority: TW109137075 20201026
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L33/24 ; H01L33/46 ; H01L33/62

Abstract:
A micro light-emitting diode display includes a first-type semiconductor base layer, a plurality of semiconductor light-emitting mesas dispersedly disposed on the first-type semiconductor base layer, a semiconductor heightening portion disposed on the first-type semiconductor base layer, a first bonding metal layer disposed on the semiconductor heightening portion, and a plurality of second bonding metal layers respectively disposed on the semiconductor light-emitting mesas. A top surface of the semiconductor heightening portion and a plurality of top surfaces of the semiconductor light-emitting mesas facing away from the first-type semiconductor base layer are coplanar. The top surface of the semiconductor heightening portion forms a first bonding surface adjacent to the first bonding metal layer. The top surfaces of the semiconductor light-emitting mesas respectively form a plurality of second bonding surfaces adjacent to the second bonding metal layers, and the first bonding surface and the second bonding surfaces are coplanar.
Public/Granted literature
- US20220131040A1 MICRO LIGHT-EMITTING DIODE DISPLAY Public/Granted day:2022-04-28
Information query
IPC分类: