公开(公告)号：US12237458B2

公开(公告)日：2025-02-25

申请号：US17744760

申请日：2022-05-16

Applicant: PlayNitride Display Co., Ltd.

Inventor： Chih-Ling Wu ,  Yen-Yeh Chen ,  Yi-Min Su ,  Yi-Chun Shih

IPC: H01L33/62 ,  H01L25/075

Abstract: A micro light emitting device display apparatus including a substrate, a plurality of micro light emitting devices, an isolation layer, and at least one first air gap is provided. The substrate has a plurality of connection pads. The micro light emitting devices are discretely disposed on the substrate. The isolation layer is disposed between the substrate and each of the micro light emitting devices. The at least one first air gap is disposed between the substrate and a surface of the isolation layer facing the substrate.

公开(公告)号：US11616168B2

公开(公告)日：2023-03-28

申请号：US17128183

申请日：2020-12-20

Applicant: PlayNitride Display Co., Ltd.

Inventor： Yen-Yeh Chen ,  Chih-Ling Wu

IPC: H01L27/15 ,  H01L33/24 ,  H01L33/46 ,  H01L33/62

Abstract: A micro light-emitting diode display includes a first-type semiconductor base layer, a plurality of semiconductor light-emitting mesas dispersedly disposed on the first-type semiconductor base layer, a semiconductor heightening portion disposed on the first-type semiconductor base layer, a first bonding metal layer disposed on the semiconductor heightening portion, and a plurality of second bonding metal layers respectively disposed on the semiconductor light-emitting mesas. A top surface of the semiconductor heightening portion and a plurality of top surfaces of the semiconductor light-emitting mesas facing away from the first-type semiconductor base layer are coplanar. The top surface of the semiconductor heightening portion forms a first bonding surface adjacent to the first bonding metal layer. The top surfaces of the semiconductor light-emitting mesas respectively form a plurality of second bonding surfaces adjacent to the second bonding metal layers, and the first bonding surface and the second bonding surfaces are coplanar.

公开(公告)号：US11380815B2

公开(公告)日：2022-07-05

申请号：US16903390

申请日：2020-06-17

Applicant: PlayNitride Display Co., Ltd.

Inventor： Yun-Li Li ,  Tzu-Yang Lin ,  Ying-Tsang Liu ,  Chih-Ling Wu

IPC: H01L33/00 ,  H01L33/48 ,  H01L27/15

Abstract: A method of fabricating a micro light emitting diode (LED) panel is provided. The method includes forming a semiconductor material substrate, forming a plurality of transistor devices, transferring and bonding the transistor devices onto a circuit substrate, and transferring a plurality of micro LED devices from a micro LED device substrate to the circuit substrate. The semiconductor material substrate includes a carrier, a release layer, an inorganic insulation layer, and a semiconductor material layer. The release layer is located between the carrier and the inorganic insulation layer. The semiconductor material layer is bonded to the release layer through the inorganic insulation layer. Electron mobility of the semiconductor material layer is greater than 20 cm2/V·s. The transistor devices are disposed on the release layer and are electrically connected to the circuit substrate. The micro LED devices are electrically connected to the transistor devices. A micro LED panel is also provided.

公开(公告)号：US20220131040A1

公开(公告)日：2022-04-28

申请号：US17128183

申请日：2020-12-20

Applicant: PlayNitride Display Co., Ltd.

Inventor： Yen-Yeh Chen ,  Chih-Ling Wu

IPC: H01L33/24 ,  H01L33/46 ,  H01L27/15 ,  H01L33/62

Abstract: A micro light-emitting diode display includes a first-type semiconductor base layer, a plurality of semiconductor light-emitting mesas dispersedly disposed on the first-type semiconductor base layer, a semiconductor heightening portion disposed on the first-type semiconductor base layer, a first bonding metal layer disposed on the semiconductor heightening portion, and a plurality of second bonding metal layers respectively disposed on the semiconductor light-emitting mesas. A top surface of the semiconductor heightening portion and a plurality of top surfaces of the semiconductor light-emitting mesas facing away from the first-type semiconductor base layer are coplanar. The top surface of the semiconductor heightening portion forms a first bonding surface adjacent to the first bonding metal layer. The top surfaces of the semiconductor light-emitting mesas respectively form a plurality of second bonding surfaces adjacent to the second bonding metal layers, and the first bonding surface and the second bonding surfaces are coplanar.

公开(公告)号：US11296259B2

公开(公告)日：2022-04-05

申请号：US16718982

申请日：2019-12-18

Applicant: PlayNitride Display Co., Ltd.

Inventor： Chih-Ling Wu ,  Yi-Min Su ,  Shiang-Ning Yang

IPC: H01L21/67 ,  H01L25/075 ,  H01L33/24 ,  H01L33/36 ,  H01L33/62 ,  H01L33/20 ,  H01L33/58 ,  H01L33/54 ,  H01L33/44

Abstract: A micro semiconductor chip, a micro semiconductor structure, and a transfer device are provided. The micro semiconductor chip includes an epitaxial structure, a first-type electrode, a second-type electrode and a top light guide element. The epitaxial structure has a top surface, a bottom surface and a side surface. The top light guide element is disposed on the top surface of the epitaxial structure, wherein the top light guide element has a light extraction surface and a bottom surface, wherein the edge of the light extraction surface completely overlaps the edge of the bottom surface of the top light guide element. The light extraction surface is a curved surface, a combination of at least two curved surfaces, or a combination of at least one curved surface and at least one planar surface.

公开(公告)号：US20220020903A1

公开(公告)日：2022-01-20

申请号：US17489789

申请日：2021-09-30

Applicant: PlayNitride Display Co., Ltd.

Inventor： Yi-Min Su ,  Sheng-Chieh Liang ,  Chih-Ling Wu ,  Gwo-Jiun Sheu ,  Yu-Yun Lo

IPC: H01L33/58 ,  H01L25/075 ,  H01L33/44

Abstract: A micro device includes an epitaxial structure, an overcoat layer, and a first light-guiding structure. The epitaxial structure has a top surface and a bottom surface opposite to each other and a peripheral surface connecting the top surface and the bottom surface. The insulating layer covers at least the bottom surface and part of the peripheral surface of the epitaxial structure. The overcoat layer includes a contact portion and an extension portion. The contact portion conformally covers the insulating layer and the peripheral surface and the bottom surface of the epitaxial structure, and the extension portion connects the contact portion and extends in a direction away from the peripheral surface. The display apparatus includes a circuit substrate and a plurality of the above-mentioned micro devices. The micro devices are disposed and are correspondingly electrically connected to the first pads and the second pads of circuit substrate.

公开(公告)号：US20210325792A1

公开(公告)日：2021-10-21

申请号：US17086464

申请日：2020-11-02

Applicant: PlayNitride Display Co., Ltd.

Inventor： Yen-Yeh Chen ,  Shiang-Ning Yang ,  Chih-Ling Wu ,  Yu-Ya Peng

IPC: G03F9/00

Abstract: An alignment structure is provided. The alignment structure includes a substrate, an alignment portion, and an extension portion. The alignment portion is disposed on the substrate. The extension portion is disposed on the substrate. The extension portion at least partially surrounds the alignment portion and is spaced apart from the alignment portion by a void. A side of the extension portion adjacent to the alignment portion and a side of the alignment portion adjacent to the extension portion are conformal to each other.

公开(公告)号：US20200343421A1

公开(公告)日：2020-10-29

申请号：US16522686

申请日：2019-07-26

Applicant: PlayNitride Display Co., Ltd.

Inventor： Yi-Min Su ,  Sheng-Chieh Liang ,  Chih-Ling Wu ,  Gwo-Jiun Sheu ,  Yu-Yun Lo

IPC: H01L33/58 ,  H01L33/22

Abstract: A structure with micro device includes a substrate, at least one micro device, and at least one holding structure. The micro device includes an epitaxial structure and an overcoat layer. The epitaxial structure has a top surface and a bottom surface opposite to each other and a peripheral surface connecting the top surface and the bottom surface. The overcoat layer includes a contact portion and an extension portion. The contact portion covers the peripheral surface and the bottom surface of the epitaxial structure. The extension portion connects the contact portion and extends in a direction away from the peripheral surface. The holding structure includes at least one connecting portion, at least one sacrificial portion and at least one holding portion. The connecting portion is disposed on the top surface of the epitaxial structure and the extension portion of the overcoat layer. The sacrificial portion connects the connecting portion and the holding portion. A portion of the sacrificial portion contacts the extension portion to define a predetermined fracture region. The holding portion connects the sacrificial portion and extends onto the substrate.

公开(公告)号：US20230055323A1

公开(公告)日：2023-02-23

申请号：US17853929

申请日：2022-06-30

Applicant: PlayNitride Display Co., Ltd.

Inventor： Yen-Yeh Chen ,  Yu-Jui Tseng ,  Chih-Ling Wu

IPC: H01L25/075 ,  H01L33/62

Abstract: A micro light-emitting diode display device including a circuit substrate, an epitaxy structure and a conducting layer is provided. The epitaxy structure is electrically connected to the circuit substrate, and includes a connection layer and a plurality of light-emitting mesas. The plurality of light-emitting mesas are disposed on the connection layer, wherein a thickness of the connection layer is less than a thickness of the plurality of light-emitting mesas, and the connection layer has a first surface exposed by the plurality of light-emitting mesas and a second surface opposite to the first surface. The conducting layer is disposed on the second surface of the connection layer and exposes a plurality of sub-areas of the second surface, wherein a vertical projection of the conductive layer onto the connection layer overlaps a vertical projection of the first surface onto the connection layer.

公开(公告)号：US20220302340A1

公开(公告)日：2022-09-22

申请号：US17832711

申请日：2022-06-06

Applicant: PlayNitride Display Co., Ltd.

Inventor： Yun-Li Li ,  Tzu-Yang Lin ,  Ying-Tsang Liu ,  Chih-Ling Wu

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/48

Abstract: A micro light emitting diode panel is provided. The micro light emitting diode panel includes a circuit substrate, a plurality of transistor devices and a plurality of micro light emitting diode devices. The transistor devices are bonded to the circuit substrate. Each of the transistor devices has a semiconductor pattern, a source electrode, a drain electrode and a gate electrode. The source electrode and the drain electrode are electrically connected to the semiconductor pattern. The source electrode, the drain electrode, and the gate electrode are located between the semiconductor pattern and the circuit substrate. The electron mobility of the semiconductor pattern is greater than 20 cm2/V·s. The micro light emitting diode devices are bonded to the circuit substrate, and are electrically connected to the transistor devices respectively.