Invention Grant
- Patent Title: Radiation-emitting semiconductor chip
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Application No.: US17480920Application Date: 2021-09-21
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Publication No.: US11631783B2Publication Date: 2023-04-18
- Inventor: Fabian Kopp , Attila Molnar , Bjoern Muermann , Franz Eberhard
- Applicant: OSRAM OLED GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM OLED GmbH
- Current Assignee: OSRAM OLED GmbH
- Current Assignee Address: DE Regensburg
- Agency: Slater Matsil, LLP
- Priority: DE102016112587.3 20160708
- Main IPC: H01L33/40
- IPC: H01L33/40 ; H01L33/20 ; H01L33/14 ; H01L33/32 ; H01L33/46 ; H01L33/62 ; H01L33/38 ; H01L33/08

Abstract:
In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the radiation-emitting semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the radiation-emitting semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places in plan view of the radiation-emitting semiconductor chip, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer containing a dielectric material, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer.
Public/Granted literature
- US20220005974A1 Radiation-Emitting Semiconductor Chip Public/Granted day:2022-01-06
Information query
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