A 1S-1T ferroelectric memory cell is provided that include a transistor and a two-terminal selector device. The transistor exhibits a low conductive state and a high conductive state (channel resistance), depending on drive voltage. The two-terminal selector device exhibits one of an ON-state and an OFF-state depending upon whether the transistor is in its low conductive state or its high conductive state. The transistor may be, for instance, a ferroelectric gate vertical transistor. Modulation of a polarization state of ferroelectric material of the vertical transistor may be utilized to switch the state of the selector device. The memory cell may thus selectively be operated in one of an ON-state and an OFF-state depending upon whether the selector device is in its ON-state or OFF-state.