Invention Grant
- Patent Title: Gap-fill layers, methods of forming the same, and semiconductor devices manufactured by the methods of forming the same
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Application No.: US17578785Application Date: 2022-01-19
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Publication No.: US11640922B2Publication Date: 2023-05-02
- Inventor: Miso Shin , Chungki Min , Gihwan Kim , Sanghyeok Kim , Hyo-Jung Kim , Geunwon Lim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2018-0106067 20180905
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/768 ; H01L21/3105 ; H01L27/11573 ; H01L21/324 ; H01L27/11582 ; H01L21/311
Abstract:
A device including a gap-fill layer may include an upper layer that on a lower layer that defines a trench that extends from a top surface of the upper layer and towards the lower layer, and the gap filling layer may be a multi-layered structure filling the trench. The gap-filling layer may include a first dielectric layer that fills a first portion of the trench and has a top surface proximate to the top surface of the upper layer, a second dielectric layer that fills a second portion of the trench and has a top surface proximate to the top surface of the upper layer and more recessed toward the lower layer than the top surface of the first dielectric layer, and a third dielectric layer that fills a remaining portion of the trench and covers the top surface of the second dielectric layer.
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