Invention Grant
- Patent Title: Light-emitting element and manufacturing method thereof
-
Application No.: US17328732Application Date: 2021-05-24
-
Publication No.: US11641005B2Publication Date: 2023-05-02
- Inventor: Yi-Lun Chou , Chih-Hao Chen
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Patterson + Sheridan, LLP
- Priority: TW107102115 20180119
- Main IPC: H01L33/32
- IPC: H01L33/32 ; H01L21/78 ; H01L31/18 ; H01L33/00 ; H01L33/36 ; H01L33/24 ; H01L33/40 ; H01L33/44

Abstract:
A method of manufacturing a light-emitting element includes: providing a substrate, wherein the substrate includes a top surface with a first area and a second area; introducing a semiconductor material to form a first layer on the first area and a second layer on the second area, wherein the first layer includes a first crystal quality and the second layer includes a second crystal quality, the first crystal quality is different from the second crystal quality; and dicing the substrate along the second area.
Public/Granted literature
- US20210280745A1 LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-09-09
Information query
IPC分类: