Invention Grant
- Patent Title: Selective anisotropic metal etch
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Application No.: US17389119Application Date: 2021-07-29
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Publication No.: US11658043B2Publication Date: 2023-05-23
- Inventor: Jonathan Shaw , Priyadarshi Panda , Nancy Fung , Yongchang Dong , Somaye Rasouli , Gene Lee
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: H01L21/3213
- IPC: H01L21/3213
Abstract:
A method of patterning a substrate is provided. The method includes modifying a surface of a metal-containing layer formed over a substrate positioned in a processing region of a processing chamber by exposing the surface of the metal-containing layer to plasma effluents of a chlorine-containing gas precursor and an oxygen-containing gas precursor to form a modified surface of the metal-containing layer. The method further includes directing plasma effluents of an inert gas precursor towards the modified surface of the metal-containing layer. The plasma effluents of the inert gas precursor are directed by applying a bias voltage to a substrate support holding the substrate. The method further includes anisotropically etching the modified surface of the metal-containing layer with the plasma effluents of the inert gas precursor to form a first recess having a first sidewall in the metal-containing layer.
Public/Granted literature
- US20220068661A1 SELECTIVE ANISOTROPIC METAL ETCH Public/Granted day:2022-03-03
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