Invention Grant
- Patent Title: Power field effect transistor topology and bootstrap circuit for inverting buck-boost DC-DC converter
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Application No.: US17124359Application Date: 2020-12-16
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Publication No.: US11658572B2Publication Date: 2023-05-23
- Inventor: Nikunj Gandhi , Gaurav Garg , Apratim Chatterjee , Shobhit Tyagi , Sudhir Polarouthu , Guruvara Nanda Kishore Mutchakarla
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Priority: IN 2041024490 2020.06.11
- Main IPC: H02M1/08
- IPC: H02M1/08 ; H02M3/158 ; G11C13/00

Abstract:
For a buck-boost DC-DC converter with n-type high-side field effect transistor (HSFET), a supply is derived from input and output rails, and this supply maintains a constant differential voltage independent of input supply voltage. The derived supply is used as the high supply (HS) of an HSFET Driver. As such, the HSFET resistance becomes independent of supply variation. A wide range ultra-low IQ (Quiescent current), edge triggered level-shifter provides support to a bootstrapped power stage of the inverting buck-boost DC-DC converter. When p-type HSFET is used, a supply is derived from the input and output supply rails, and this derived supply maintains a constant differential voltage independent to the input supply voltage. The derived supply is used as the low supply (LS) or ‘ground’ of the HSFET Driver. As such, the p-type HSFET resistance becomes independent of supply variation.
Public/Granted literature
- US20210391795A1 POWER FIELD EFFECT TRANSISTOR TOPOLOGY AND BOOTSTRAP CIRCUIT FOR INVERTING BUCK-BOOST DC-DC CONVERTER Public/Granted day:2021-12-16
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