Invention Grant
- Patent Title: Method of forming process film
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Application No.: US16886743Application Date: 2020-05-28
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Publication No.: US11666950B2Publication Date: 2023-06-06
- Inventor: Tsung-Lin Lee , Yi-Ming Lin , Chih-Hung Yeh , Zi-Yuang Wang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: C23C16/00
- IPC: C23C16/00 ; B08B3/08 ; B08B9/08 ; H01J37/32 ; C23C16/44 ; C23C16/22 ; B05D1/00 ; C23C14/06

Abstract:
A method of forming a process film includes the following operations. A substrate is transferred into a process chamber having an interior surface. A process film is formed over the substrate, and the process film is also formed on the interior surface of the process chamber. The substrate is transferred out of the process chamber. A non-process film is formed on the interior surface of the process chamber. In some embodiments, porosity of the process film is greater than a porosity of the non-process film.
Public/Granted literature
- US20200290095A1 METHOD OF FORMING PROCESS FILM Public/Granted day:2020-09-17
Information query
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