Invention Grant
- Patent Title: Extreme ultraviolet mask blank defect reduction methods
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Application No.: US17077176Application Date: 2020-10-22
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Publication No.: US11669008B2Publication Date: 2023-06-06
- Inventor: Wen Xiao , Sanjay Bhat , Shiyu Liu , Binni Varghese , Vibhu Jindal , Azeddine Zerrade
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: G03F1/22
- IPC: G03F1/22 ; C23C14/34 ; H01J37/34 ; C23C14/06 ; H01J37/32 ; C23C14/00
Abstract:
Methods for the manufacture of extreme ultraviolet (EUV) mask blanks and production systems therefor are disclosed. A method for forming an EUV mask blank comprises forming a bilayer on a portion of a multi-cathode PVD chamber interior and then forming a multilayer stack of Si/Mo on a substrate in the multi-cathode PVD chamber.
Public/Granted literature
- US20210124252A1 EXTREME ULTRAVIOLET MASK BLANK DEFECT REDUCTION METHODS Public/Granted day:2021-04-29
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