Invention Grant
- Patent Title: Cobalt oxide film upon electron sink
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Application No.: US16285370Application Date: 2019-02-26
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Publication No.: US11702756B2Publication Date: 2023-07-18
- Inventor: Muhammad Ali Ehsan , Md. Abdul Aziz , Abbas Saeed Hakeem
- Applicant: King Fahd University of Petroleum and Minerals
- Applicant Address: SA Dhahran
- Assignee: King Fahd University of Petroleum and Minerals
- Current Assignee: King Fahd University of Petroleum and Minerals
- Current Assignee Address: SA Dhahran
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: C23C16/40
- IPC: C23C16/40 ; C25B11/091 ; C25B1/04 ; B01J23/75 ; B01J37/02 ; B01J35/00 ; C25B11/051 ; C25B11/057 ; C23C16/448

Abstract:
A synthetic methodology for robust, nanostructured films of cobalt oxide over metal evaporated gold or similar material layer of, e.g., 50 nm, directly onto glass or other substrates via aerosol assisted chemical vapor deposition (AACVD). This approach allows film growth rates in the range of, e.g., 0.8 nm/s, using a commercially available precursor, which is ˜10-fold the rate of electrochemical synthetic routes. Thus, 250 nm thick cobalt oxide films may be generated in only 5 minutes of deposition time. The water oxidation reaction for such films may start at ˜0.6 V vs Ag/AgCl with current density of 10 mA/cm2 and is achieved at ˜0.75 V corresponding to an overpotential of 484 mV. This current density is further increased to 60 mA/cm2 at ˜1.5 V (vs Ag/AgCl). Electrochemically active surface area (ECSA) calculations indicate that the synergy between a Au-film, acting as electron sink, and the cobalt oxide film(s), acting as catalytic layer(s), are more pronounced than the surface area effects.
Public/Granted literature
- US20200270757A1 COBALT OXIDE FILM UPON ELECTRON SINK Public/Granted day:2020-08-27
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