Invention Grant
- Patent Title: Method and device for implanting ions in wafers
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Application No.: US17338933Application Date: 2021-06-04
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Publication No.: US11705300B2Publication Date: 2023-07-18
- Inventor: Florian Krippendorf , Constantin Csato
- Applicant: mi2-factory GmbH
- Applicant Address: DE Jena
- Assignee: MI2-FACTORY GMBH
- Current Assignee: MI2-FACTORY GMBH
- Current Assignee Address: DE Jena
- Agency: Lucas & Mercanti, LLP
- Priority: DE 2016122791.9 2016.11.25
- The original application number of the division: US16348800
- Main IPC: H01J37/317
- IPC: H01J37/317 ; H01J37/05 ; C23C14/18 ; C23C14/48 ; H01J37/147 ; H01J37/20 ; H01L21/04 ; H01L29/32
Abstract:
A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter. The wafer is heated to a temperature of more than 200° C. The wafer is a semiconductor wafer including SiC, and the ion beam includes aluminum ions.
Public/Granted literature
- US20210296075A1 METHOD AND DEVICE FOR IMPLANTING IONS IN WAFERS Public/Granted day:2021-09-23
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