Invention Grant
- Patent Title: Method of growing graphene selectively
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Application No.: US17138194Application Date: 2020-12-30
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Publication No.: US11713248B2Publication Date: 2023-08-01
- Inventor: Changseok Lee , Changhyun Kim , Kyung-Eun Byun , Keunwook Shin , Hyeonjin Shin , Eunkyu Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20200001012 2020.01.03
- Main IPC: C23C16/26
- IPC: C23C16/26 ; C01B32/186 ; C01B32/194 ; C23C16/513 ; C23C16/04 ; C23C16/02
Abstract:
A method of selectively growing graphene includes forming an ion implantation region and an ion non-implantation region by implanting ions locally into a substrate; and selectively growing graphene in the ion implantation region or the ion non-implantation region.
Public/Granted literature
- US20210206643A1 METHOD OF GROWING GRAPHENE SELECTIVELY Public/Granted day:2021-07-08
Information query
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