Invention Grant
- Patent Title: Low-k films
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Application No.: US17840797Application Date: 2022-06-15
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Publication No.: US11713507B2Publication Date: 2023-08-01
- Inventor: Shuaidi Zhang , Ning Li , Mihaela A. Balseanu
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- The original application number of the division: US16897490 2020.06.10
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/78 ; C23C16/455 ; C23C16/36
Abstract:
Methods for plasma enhanced atomic layer deposition (PEALD) of low-κ films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formula (I)
wherein R1, R2, R3, R4, R5, and R6 are independently selected from hydrogen (H), substituted alkyl, or unsubstituted alkyl; purging the processing chamber of the silicon precursor; exposing the substrate to a carbon monoxide (CO) plasma to form one or more of a silicon oxycarbide (SiOC) or silicon oxycarbonitride (SiOCN) film on the substrate; and purging the processing chamber.
wherein R1, R2, R3, R4, R5, and R6 are independently selected from hydrogen (H), substituted alkyl, or unsubstituted alkyl; purging the processing chamber of the silicon precursor; exposing the substrate to a carbon monoxide (CO) plasma to form one or more of a silicon oxycarbide (SiOC) or silicon oxycarbonitride (SiOCN) film on the substrate; and purging the processing chamber.
Public/Granted literature
- US20220307134A1 LOW-K FILMS Public/Granted day:2022-09-29
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