Invention Grant
- Patent Title: Semiconductor memory device having control unit which sets the refresh interval of the memory cell
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Application No.: US17575117Application Date: 2022-01-13
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Publication No.: US11715510B2Publication Date: 2023-08-01
- Inventor: Shinya Fujioka
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung
- Assignee: WINDBOND ELECTRONICS CORP.
- Current Assignee: WINDBOND ELECTRONICS CORP.
- Current Assignee Address: TW Taichung
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP 21029784 2021.02.26
- Main IPC: G11C11/406
- IPC: G11C11/406 ; G11C29/42 ; G11C11/4096
Abstract:
A semiconductor memory device capable of suppressing an increase in power consumption and avoiding data destruction due to the row hammer problem is provided. The semiconductor memory device includes a refresh control unit (first control unit) that sets a memory cell refresh interval based on information about a memory cell refresh interval included in a predetermined command input from the outside.
Public/Granted literature
- US20220277786A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2022-09-01
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