Invention Grant
- Patent Title: In-system test of a memory device
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Application No.: US17371830Application Date: 2021-07-09
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Publication No.: US11715545B2Publication Date: 2023-08-01
- Inventor: Marco Redaelli
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C29/38 ; G06F13/40 ; B60R1/00 ; F16H61/12

Abstract:
An example system includes a processing resource and a switch board coupled to a system under test (SUT) and the processing resource. The SUT includes a memory device. The switch board can be configured to provide power to the SUT, communicate a first signal from the SUT to the processing resource, and provide a second signal to the SUT that simulates an input to the SUT during operation of the SUT. The processing resource can be configured to receive a function, selected from a library of functions, to execute during a test of the memory device and cause the switch board to provide the second signal during the test of the SUT.
Public/Granted literature
- US20210335441A1 IN-SYSTEM TEST OF A MEMORY DEVICE Public/Granted day:2021-10-28
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