The present disclosure relates to a driving control circuit, method and device for a gallium nitride (GaN) transistor, and a medium. An ADriver pin and an electronic switch are added to an existing flyback power supply circuit. The electronic switch includes a first terminal connected to the ADriver pin, a second terminal connected between a driving resistor and a GaN transistor, and a third terminal connected between a current detection resistor and a current sense pin. By improving the driving control circuit and the driving control method for the GaN transistor, the present disclosure can effectively prevent the false turn-on problem due to high-frequency oscillation between the leakage inductance of the transformer and the parasitic capacitance after the GaN transistor is turned off, and drives the GaN transistor more reliably.