Invention Grant
- Patent Title: High-side gate drive voltage generation circuit and semiconductor module
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Application No.: US17488114Application Date: 2021-09-28
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Publication No.: US11757347B2Publication Date: 2023-09-12
- Inventor: Narumi Matsushita
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP 20207681 2020.12.15
- Main IPC: H02M1/08
- IPC: H02M1/08 ; H02M1/00 ; H02M1/32

Abstract:
Provided is a voltage generation circuit for improving the characteristics of a high-side switching element by applying an appropriate control power supply voltage to the high-side drive circuit. The voltage generation circuit includes a bootstrap circuit and a step-down circuit. The bootstrap circuit includes a diode and a current limiting resistor. The step-down circuit is connected to a high potential side of the high-side switching element and an input side of the bootstrap circuit. The step-down circuit outputs a compensated power supply voltage generated by stepping down a power supply voltage applied to the high potential side of the high-side switching element to the bootstrap circuit. The step-down circuit generates the compensated power supply voltage obtained by adding a compensation voltage corresponding to a voltage drop due to the diode and the current limiting resistor to a control power supply voltage for a low-side drive circuit.
Public/Granted literature
- US20220190717A1 VOLTAGE GENERATION CIRCUIT AND SEMICONDUCTOR MODULE Public/Granted day:2022-06-16
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