Invention Grant
- Patent Title: MFM capacitor with multilayered oxides and metals and processes for forming such
-
Application No.: US16368450Application Date: 2019-03-28
-
Publication No.: US11769789B2Publication Date: 2023-09-26
- Inventor: Nazila Haratipour , Chia-Ching Lin , Sou-Chi Chang , Ashish Verma Penumatcha , Owen Loh , Mengcheng Lu , Seung Hoon Sung , Ian A. Young , Uygar Avci , Jack T. Kavalieros
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt P.C.
- Main IPC: H01G4/30
- IPC: H01G4/30 ; H10B51/00 ; H01L23/522 ; H01L49/02 ; H01G4/012
Abstract:
A capacitor is disclosed. The capacitor includes a first metal layer, a second metal layer on the first metal layer, a ferroelectric layer on the second metal layer, and a third metal layer on the ferroelectric layer. The second metal layer includes a first non-reactive barrier metal and the third metal layer includes a second non-reactive barrier metal. A fourth metal layer is on the third metal layer.
Public/Granted literature
- US20200312949A1 MFM CAPACITOR WITH MULTILAYERED OXIDES AND METALS AND PROCESSES FOR FORMING SUCH Public/Granted day:2020-10-01
Information query
