Invention Grant
- Patent Title: Gallium nitride transistor with a doped region
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Application No.: US17165697Application Date: 2021-02-02
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Publication No.: US11769824B2Publication Date: 2023-09-26
- Inventor: Dong Seup Lee , Jungwoo Joh , Pinghai Hao , Sameer Pendharkar
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Yudong Kim; Frank D. Cimino
- The original application number of the division: US16194794 2018.11.19
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L21/265 ; H01L29/06 ; H01L29/20 ; H01L29/417 ; H01L29/66 ; H01L29/08 ; H01L29/423 ; H01L29/10
Abstract:
In some examples, a transistor comprises a gallium nitride (GaN) layer; a GaN-based alloy layer having a top side and disposed on the GaN layer, wherein source, drain, and gate contact structures are supported by the GaN layer; and a first doped region positioned in a drain access region and extending from the top side into the GaN layer.
Public/Granted literature
- US20210159329A1 GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION Public/Granted day:2021-05-27
Information query
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