Invention Grant
- Patent Title: Non-volatile memory with updating of read compare voltages based on measured current
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Application No.: US17699508Application Date: 2022-03-21
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Publication No.: US11791001B2Publication Date: 2023-10-17
- Inventor: Yi Song , Jiahui Yuan , Dengtao Zhao
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Agency: Vierra Magen Marcus LLP
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G11C16/08 ; G11C16/28 ; G11C16/10

Abstract:
A memory system reads data from non-volatile memory cells using a set of read compare voltages to determine which data state the memory cells are in, where each data state is associated with predetermined data values. The read compare voltages are determined dynamically based on a difference between memory cell current at time of programming and memory cell current at time of reading.
Public/Granted literature
- US20230298678A1 NON-VOLATILE MEMORY WITH UPDATING OF READ COMPARE VOLTAGES BASED ON MEASURED CURRENT Public/Granted day:2023-09-21
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