Invention Grant
- Patent Title: Low-power terahertz magnetic nano-oscillating device
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Application No.: US16939864Application Date: 2020-07-27
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Publication No.: US11791082B2Publication Date: 2023-10-17
- Inventor: Kyung-Jin Lee , Byong Guk Park , Dong-Kyu Lee
- Applicant: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
- Applicant Address: KR Seoul
- Assignee: Korea University Research and Business Foundation
- Current Assignee: Korea University Research and Business Foundation
- Current Assignee Address: KR Seoul
- Agency: NSIP Law
- Priority: KR 20180030023 2018.03.15
- Main IPC: H01F10/32
- IPC: H01F10/32 ; H10N50/85 ; H10N52/00 ; H10N52/80 ; G11C11/16

Abstract:
A magnetic nano oscillating device, according to an embodiment of the present invention, comprises: a ferromagnetic layer disposed on a substrate; a non-magnetic conductive layer laminated on the ferromagnetic layer; an antiferromagnetic layer (or a ferrimagnetic layer) laminated on the non-magnetic conductive layer; and first and second electrodes respectively contacting both side surfaces of the ferromagnetic layer and the non-magnetic conductive layer. The antiferromagnetic layer (or ferrimagnetic layer) is a thin film made of a material magnetized in perpendicular or in-plane direction to a layer surface, the ferromagnetic layer is in-plane magnetized to a layer surface of the ferromagnetic layer, and an in-plane current injected into the ferromagnetic layer and the non-magnetic conductive layer through the first and second electrodes provides a spin current including a spin in a thickness direction of the thin film transferred to the antiferromagnetic layer (or ferrimagnetic layer), thereby causing magnetization precessional motion of a sub-lattice of the antiferromagnetic layer (or ferrimagnetic layer).
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