• Patent Title: Resist pattern formation method
  • Application No.: US17251722
    Application Date: 2019-06-14
  • Publication No.: US11796919B2
    Publication Date: 2023-10-24
  • Inventor: Seiichi Tagawa
  • Applicant: OSAKA UNIVERSITY
  • Applicant Address: JP Osaka
  • Assignee: OSAKA UNIVERSITY
  • Current Assignee: OSAKA UNIVERSITY
  • Current Assignee Address: JP Osaka
  • Agency: Studebaker & Brackett PC
  • Priority: JP 18113560 2018.06.14
  • International Application: PCT/JP2019/023750 2019.06.14
  • International Announcement: WO2019/240279A 2019.12.19
  • Date entered country: 2020-12-11
  • Main IPC: G03F7/38
  • IPC: G03F7/38
Resist pattern formation method
Abstract:
A resist pattern formation method includes: forming on a substrate a resist layer containing a base resin, a sensitizer precursor, an acid generator, a base generator, and a base; generating a sensitizer from the sensitizer precursor; generating an acid from the acid generator and a base from the base generator; performing heat treatment on the resist layer after flood exposure; and developing the resist layer after the heat treatment. A ratio (C1=A1/B1) of a value (A1) representing an acid in pattern exposure to a value (B1) representing a base in the pattern exposure satisfies a relationship 0.9×C1
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