Invention Grant
- Patent Title: Resist pattern formation method
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Application No.: US17251722Application Date: 2019-06-14
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Publication No.: US11796919B2Publication Date: 2023-10-24
- Inventor: Seiichi Tagawa
- Applicant: OSAKA UNIVERSITY
- Applicant Address: JP Osaka
- Assignee: OSAKA UNIVERSITY
- Current Assignee: OSAKA UNIVERSITY
- Current Assignee Address: JP Osaka
- Agency: Studebaker & Brackett PC
- Priority: JP 18113560 2018.06.14
- International Application: PCT/JP2019/023750 2019.06.14
- International Announcement: WO2019/240279A 2019.12.19
- Date entered country: 2020-12-11
- Main IPC: G03F7/38
- IPC: G03F7/38

Abstract:
A resist pattern formation method includes: forming on a substrate a resist layer containing a base resin, a sensitizer precursor, an acid generator, a base generator, and a base; generating a sensitizer from the sensitizer precursor; generating an acid from the acid generator and a base from the base generator; performing heat treatment on the resist layer after flood exposure; and developing the resist layer after the heat treatment. A ratio (C1=A1/B1) of a value (A1) representing an acid in pattern exposure to a value (B1) representing a base in the pattern exposure satisfies a relationship 0.9×C1
Public/Granted literature
- US20210216016A1 RESIST PATTERN FORMATION METHOD Public/Granted day:2021-07-15
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