公开(公告)号：US10025190B2

公开(公告)日：2018-07-17

申请号：US15106915

申请日：2014-12-15

Applicant: TOKYO ELECTRON LIMITED ,  OSAKA UNIVERSITY

Inventor： Seiji Nagahara ,  Gousuke Shiraishi ,  Satoru Shimura ,  Kousuke Yoshihara ,  Shinichiro Kawakami ,  Masaru Tomono ,  Seiichi Tagawa ,  Akihiro Oshima

IPC: G03F7/20 ,  H01L21/67

Abstract: A substrate treatment system for treating a substrate, includes: a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided; an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system; a light irradiation apparatus which performs post-exposure using UV light on the resist film on the substrate after the exposure of patterns is performed; and a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere, wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere.

公开(公告)号：US09977332B2

公开(公告)日：2018-05-22

申请号：US14769410

申请日：2014-02-20

Applicant: OSAKA UNIVERSITY

Inventor： Seiichi Tagawa ,  Akihiro Oshima

IPC: G03F7/20 ,  G03F7/38 ,  G03F7/32

CPC classification number: G03F7/2022 ,  G03F7/203 ,  G03F7/2032 ,  G03F7/32 ,  G03F7/38

Abstract: A resist patterning method according to the present invention includes: a resist layer forming step S101 of forming a resist layer 12 on a substrate 11; an activating step S103 of activating the resist layer by irradiation with an activating energy beam; a decay inhibiting step S105 of inhibiting decay of the activity of the resist layer; a latent pattern image forming step S107 of forming a latent pattern image in the activated resist layer by irradiation with a latent image forming energy beam; and a developing step S110 of developing the resist layer.

公开(公告)号：US10429745B2

公开(公告)日：2019-10-01

申请号：US15048584

申请日：2016-02-19

Applicant: Tokyo Electron Limited ,  Osaka University

Inventor： Michael Carcasi ,  Benjamen M. Rathsack ,  Mark H. Somervell ,  Wallace P. Printz ,  Seiji Nagahara ,  Seiichi Tagawa

IPC: G03F7/20 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/095

Abstract: Methods and systems for PS-CAR photoresist simulation are described. In an embodiment, a method includes determining by simulation at least one process parameter of a lithography process using a radiation-sensitive material. In such an embodiment, the radiation-sensitive material includes: a first light wavelength activation threshold that controls the generation of acid to a first acid concentration in the radiation-sensitive material and controls generation of photosensitizer molecules in the radiation-sensitive material, and a second light wavelength activation threshold that can excite the photosensitizer molecules in the radiation-sensitive material that results in the acid comprising a second acid concentration that is greater than the first acid concentration, the second light wavelength being different from the first light wavelength. In such an embodiment, the method also includes performing a lithography process using the previously-determined at least one process parameter.

公开(公告)号：US20170242342A1

公开(公告)日：2017-08-24

申请号：US15048584

申请日：2016-02-19

Applicant: Tokyo Electron Limited ,  Osaka University

Inventor： Michael Carcasi ,  Benjamen M. Rathsack ,  Mark H. Somervell ,  Wallace P. Printz ,  Seiji Nagahara ,  Seiichi Tagawa

IPC: G03F7/20

CPC classification number: G03F7/705 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/095 ,  G03F7/2022

Abstract: Methods and systems for PS-CAR photoresist simulation are described. In an embodiment, a method includes determining by simulation at least one process parameter of a lithography process using a radiation-sensitive material. In such an embodiment, the radiation-sensitive material includes: a first light wavelength activation threshold that controls the generation of acid to a first acid concentration in the radiation-sensitive material and controls generation of photosensitizer molecules in the radiation-sensitive material, and a second light wavelength activation threshold that can excite the photosensitizer molecules in the radiation-sensitive material that results in the acid comprising a second acid concentration that is greater than the first acid concentration, the second light wavelength being different from the first light wavelength. In such an embodiment, the method also includes performing a lithography process using the previously-determined at least one process parameter.

公开(公告)号：US11187984B2

公开(公告)日：2021-11-30

申请号：US15779013

申请日：2016-11-25

Applicant: OSAKA UNIVERSITY

Inventor： Seiichi Tagawa

IPC: G03F7/20 ,  G03F7/40 ,  G03F7/38 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/11 ,  G03F7/075 ,  G03F7/09

Abstract: A resist patterning method includes a resist layer forming step, a patterned exposure step, a flood exposure step, and a developing step. In the resist layer forming step, a resist layer is formed on a substrate. In the patterned exposure step, a sensitizer is produced from a sensitizer precursor in the resist layer. In the flood exposure step, flood exposure is performed on the resist layer in which the sensitizer has been produced to produce an acid from a strong acid generator. In the developing step, the resist layer is developed. The patterned exposure step includes: producing a strong acid from the strong acid generator; producing the sensitizer through a reaction between the strong acid and the sensitizer precursor; producing a weak acid through a reaction between the strong acid and a base; and producing the sensitizer through a reaction between the weak acid and the sensitizer precursor.

公开(公告)号：US10073348B2

公开(公告)日：2018-09-11

申请号：US15241274

申请日：2016-08-19

Applicant: OSAKA UNIVERSITY ,  TOKYO ELECTRON LIMITED ,  JSR CORPORATION

Inventor： Hisashi Nakagawa ,  Takehiko Naruoka ,  Tomoki Nagai ,  Seiichi Tagawa ,  Akihiro Oshima ,  Seiji Nagahara

IPC: G03F7/004 ,  G03F7/20 ,  H01L21/027 ,  C07C309/07 ,  C07C381/12 ,  C08F220/38 ,  C07D409/14 ,  C07C303/32 ,  C08F220/22 ,  C08F220/28 ,  C08F220/26 ,  C08F220/14 ,  G03F7/039 ,  G03F7/32 ,  G03F7/38

CPC classification number: G03F7/203 ,  C07C303/32 ,  C07C309/07 ,  C07C381/12 ,  C07D409/14 ,  C08F220/14 ,  C08F220/22 ,  C08F220/26 ,  C08F220/28 ,  C08F220/38 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2002 ,  G03F7/2022 ,  G03F7/322 ,  G03F7/38 ,  H01L21/0274

Abstract: A resist-pattern-forming method comprises: patternwise exposing a predetermined region of a resist material film to a first radioactive ray that is ionizing radiation or nonionizing radiation; floodwise exposing the resist material film to a second radioactive ray that is nonionizing radiation; baking the resist material film; and developing the resist material film to form a resist pattern. The resist material film is made from a photosensitive resin composition comprising a chemically amplified resist material. The chemically amplified resist material comprises a base component that is capable of being made soluble or insoluble in a developer solution by an action of an acid and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. A van der Waals volume of the acid generated from the generative component is no less than 3.0×10−28 m3.

公开(公告)号：US10025187B2

公开(公告)日：2018-07-17

申请号：US15117686

申请日：2015-02-17

Applicant: TOKYO ELECTRON LIMITED ,  OSAKA UNIVERSITY

Inventor： Seiji Nagahara ,  Seiichi Tagawa ,  Akihiro Oshima

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/32 ,  C07C381/12 ,  C07C309/07 ,  C07C303/32 ,  H01L21/027 ,  C08F220/14 ,  C08F220/22 ,  C08F220/38 ,  C08F220/28 ,  G03F7/38 ,  G03F7/038 ,  G03F7/20 ,  G03F1/20 ,  G03F1/24 ,  G03F1/26 ,  G03F7/16

CPC classification number: G03F7/0397 ,  C07C303/32 ,  C07C309/07 ,  C07C381/12 ,  C08F220/14 ,  C08F220/22 ,  C08F220/28 ,  C08F220/38 ,  G03F1/20 ,  G03F1/24 ,  G03F1/26 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/16 ,  G03F7/2002 ,  G03F7/2022 ,  G03F7/2041 ,  G03F7/32 ,  G03F7/322 ,  G03F7/38 ,  H01L21/0274

Abstract: A photosensitization chemical-amplification type resist material according to the present invention is used for a two-stage exposure lithography process, and contains (1) a developable base component and (2) a component generating a photosensitizer and an acid through exposure. Among three components consisting of (a) an acid-photosensitizer generator, (b) a photosensitizer precursor, and (c) a photoacid generator, the above component contains only the component (a), any two components, or all of the components (a) to (c).

公开(公告)号：US11796919B2

公开(公告)日：2023-10-24

申请号：US17251722

申请日：2019-06-14

Applicant: OSAKA UNIVERSITY

Inventor： Seiichi Tagawa

IPC: G03F7/38

CPC classification number: G03F7/38

Abstract: A resist pattern formation method includes: forming on a substrate a resist layer containing a base resin, a sensitizer precursor, an acid generator, a base generator, and a base; generating a sensitizer from the sensitizer precursor; generating an acid from the acid generator and a base from the base generator; performing heat treatment on the resist layer after flood exposure; and developing the resist layer after the heat treatment. A ratio (C1=A1/B1) of a value (A1) representing an acid in pattern exposure to a value (B1) representing a base in the pattern exposure satisfies a relationship 0.9×C1

公开(公告)号：US10670967B2

公开(公告)日：2020-06-02

申请号：US15956214

申请日：2018-04-18

Applicant: OSAKA UNIVERSITY

Inventor： Seiichi Tagawa ,  Akihiro Oshima

IPC: G03F7/20 ,  G03F7/38 ,  G03F7/32

Abstract: A resist patterning method according to the present invention includes: a resist layer forming step S101 of forming a resist layer (12) on a substrate (11); an activating step S103 of activating the resist layer by irradiation with an activating energy beam; a decay inhibiting step S105 of inhibiting decay of the activity of the resist layer; a latent pattern image forming step S107 of forming a latent pattern image in the activated resist layer by irradiation with a latent image forming energy beam; and a developing step S110 of developing the resist layer.

公开(公告)号：US10073349B2

公开(公告)日：2018-09-11

申请号：US15241345

申请日：2016-08-19

Applicant: OSAKA UNIVERSITY ,  TOKYO ELECTRON LIMITED ,  JSR CORPORATION

Inventor： Hisashi Nakagawa ,  Takehiko Naruoka ,  Tomoki Nagai ,  Seiichi Tagawa ,  Akihiro Oshima ,  Seiji Nagahara

IPC: G03F7/004 ,  G03F7/20 ,  C07C381/12 ,  C07C309/07 ,  C07C303/32 ,  C07D409/14 ,  C08F220/26 ,  C08F220/28 ,  C08F220/38 ,  C08F220/14 ,  C08F220/22 ,  C07D317/72 ,  C07D335/16 ,  C07D493/10 ,  G03F7/039 ,  G03F7/32 ,  G03F7/38 ,  C07C43/164 ,  C07C45/51 ,  C07C45/59 ,  C07D317/22

CPC classification number: G03F7/203 ,  C07C43/164 ,  C07C45/515 ,  C07C45/59 ,  C07C303/32 ,  C07C309/07 ,  C07C381/12 ,  C07D317/22 ,  C07D317/72 ,  C07D335/16 ,  C07D409/14 ,  C07D493/10 ,  C08F220/14 ,  C08F220/22 ,  C08F220/26 ,  C08F220/28 ,  C08F220/38 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/2002 ,  G03F7/2022 ,  G03F7/322 ,  G03F7/38 ,  C07C49/84

Abstract: A pattern-forming method comprises patternwise exposing a predetermined region of a resist material film made from a photosensitive resin composition comprising a chemically amplified resist material to a first radioactive ray that is ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to a second radioactive ray that is nonionizing radiation having a wavelength greater than the wavelength of the nonionizing radiation for the patternwise exposing and greater than 200 nm. The chemically amplified resist material comprises a base component, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The generative component comprises a radiation-sensitive sensitizer generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (A).