Invention Grant
- Patent Title: Crystalline multilayer structure, semiconductor device, and method of manufacturing crystalline structure
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Application No.: US17239931Application Date: 2021-04-26
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Publication No.: US11804519B2Publication Date: 2023-10-31
- Inventor: Yuichi Oshima , Katsuaki Kawara
- Applicant: FLOSFIA INC. , National Institute for Material Science
- Applicant Address: JP Kyoto
- Assignee: FLOSFIA INC.,NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Current Assignee: FLOSFIA INC.,NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Current Assignee Address: JP Kyoto; JP Ibaraki
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP 20077067 2020.04.24 JP 20077068 2020.04.24
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L21/02 ; H01L29/24
Abstract:
A crystalline multilayer structure having a high-quality crystalline layer and a semiconductor device employing such a crystalline multilayer structure are provided. A crystalline multilayer structure, including a first crystalline layer having a first crystal, and a second crystalline layer stacked on the first crystalline layer and having a second crystal, wherein the first crystal includes polycrystalline κ-Ga2O3 and the second crystal is a single crystal of a crystalline oxide.
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