Invention Grant
- Patent Title: Method and device for ultraviolet to long wave infrared multiband semiconducting single emitter
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Application No.: US16823157Application Date: 2020-03-18
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Publication No.: US11804693B2Publication Date: 2023-10-31
- Inventor: Gary S. Kanner , Maurice Leroy Strong, III
- Applicant: Northrop Grumman Systems Corporation
- Applicant Address: US VA Falls Church
- Assignee: Northrop Grumman Systems Corporation
- Current Assignee: Northrop Grumman Systems Corporation
- Current Assignee Address: US VA Falls Church
- Agency: Dority & Manning, P.A.
- Main IPC: H01S5/062
- IPC: H01S5/062 ; H01S5/042 ; H01S5/34 ; H01S5/028 ; H01S5/343 ; H01S5/10 ; H01S5/068

Abstract:
A method for generating light emission is provided. The method includes providing a transistor element including collector, emitter, and base regions, a quantum cascade region between the base and collector regions, and quantum well structures for interband emission within the base or emitter regions. A waveband controller applies, via first and second electrodes with respect to the collector and base regions, a first electrical signal to control a base-collector junction bias level and select between first and second base-collector bias levels. Selection of the first base-collector bias level causes at least one of the emitter and base regions to produce interband-based light emission having a first wavelength of a first wavelength band. Selection of the second base-collector bias level causes the quantum cascade region to produce intraband-based light emission having a second wavelength of a second wavelength band.
Public/Granted literature
- US20210296854A1 METHOD AND DEVICE FOR ULTRAVIOLET TO LONG WAVE INFRARED MULTIBAND SEMICONDUCTING SINGLE EMITTER Public/Granted day:2021-09-23
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