Invention Grant
- Patent Title: Cleaning method, method for forming semiconductor structure and system thereof
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Application No.: US17826267Application Date: 2022-05-27
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Publication No.: US11809076B2Publication Date: 2023-11-07
- Inventor: Wu-Hung Ko , Chung-Hung Lin , Chih-Wei Wen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT LAW
- Agent Anthony King
- The original application number of the division: US16943881 2020.07.30
- Main IPC: G03F1/82
- IPC: G03F1/82 ; H01L21/67 ; G03F7/00 ; B08B7/00
Abstract:
A method for cleaning a reflective photomask, a method of manufacturing a semiconductor structure, and a system for forming a semiconductor structure are provided. The method for cleaning a reflective photomask includes placing a photomask in a first chamber, and performing a dry cleaning operation on the photomask in the first chamber, wherein the dry cleaning operation includes providing hydrogen radicals to the first chamber, generating hydrocarbon gases as a result of reactions of the hydrogen radicals, and removing the hydrocarbon gases from the first chamber.
Public/Granted literature
- US20220291580A1 CLEANING METHOD, METHOD FOR FORMING SEMICONDUCTOR STRUCTURE AND SYSTEM THEREOF Public/Granted day:2022-09-15
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