-
公开(公告)号：US12189283B2
公开(公告)日：2025-01-07
申请号：US17818392
申请日：2022-08-09
Inventor： Tzu Han Liu , Chih-Wei Wen , Chung-Hung Lin
IPC: G03F1/66 , H01L21/673
Abstract: A method is provided. The method includes detaching an upper shell of a reticle pod from a base. The method further includes while the upper shell is detached from the base, blocking an inlet flow of gas from entering an interior of the reticle pod between the upper shell and the base with a use of a fluid regulating module which is in a sealed state. In the sealed state of the fluid regulating module, an opening of the fluid regulating module is covered with a sealing film. The method also includes removing a reticle positioned on the base to a process tool. In addition, the method includes performing a lithography operation in the process tool with the use of the reticle.
-
公开(公告)号：US11703754B2
公开(公告)日：2023-07-18
申请号：US17004998
申请日：2020-08-27
Inventor： Tzu Han Liu , Chih-Wei Wen , Chung-Hung Lin
IPC: G03F1/66 , H01L21/673
CPC classification number: G03F1/66 , H01L21/67359 , H01L21/67376 , H01L21/67386
Abstract: A reticle pod is provided. The reticle pod includes a container and a fluid regulating module mounted to the container. The fluid regulating module includes a first cap, a second cap and a sealing film. The first cap and the second cap are connected to each other. A flowing path is formed between the first cap and the second cap for allowing a fluid passing through the fluid regulating module. The sealing film is positioned between the first cap and the second cap and configured for regulating a flow of the fluid passing through the flowing path.
-
公开(公告)号：US20150146186A1
公开(公告)日：2015-05-28
申请号：US14609206
申请日：2015-01-29
Inventor： Chien-Hsing Lu , Chung-Hung Lin , Chih-Wei Wen
IPC: G03F7/20
CPC classification number: G03F7/70866 , G03F1/74 , Y10S430/143
Abstract: A method includes performing a beam scan on a photolithography mask to repair the photolithography mask. After the beam scan, a radiation treatment is performed on the photolithography mask. The method is performed by an apparatus including a beam generator configured to generate and project a beam on the lithography mask, a radiation source configured to generate a radiation on the lithography mask, and a process gas source configured to release a process gas onto the lithography mask. The process as reacts with a surface portion of the lithography mask to repair the lithography mask. With the radiation treatment, residue process gas on the lithography mask is removed.
Abstract translation: 一种方法包括在光刻掩模上执行光束扫描以修复光刻掩模。 在光束扫描之后，对光刻掩模进行放射线处理。 该方法由包括被配置为在光刻掩模上生成和投影光束的光束发生器的设备执行，被配置为在光刻掩模上产生辐射的辐射源以及被配置为将处理气体释放到光刻上的处理气体源 面具。 该过程与光刻掩模的表面部分反应以修复光刻掩模。 通过辐射处理，去除光刻掩模上的残留处理气体。
-
公开(公告)号：US11809076B2
公开(公告)日：2023-11-07
申请号：US17826267
申请日：2022-05-27
Inventor： Wu-Hung Ko , Chung-Hung Lin , Chih-Wei Wen
CPC classification number: G03F1/82 , B08B7/0035 , B08B7/0071 , G03F7/70033 , G03F7/70733 , G03F7/70925 , H01L21/67028 , H01L21/67225
Abstract: A method for cleaning a reflective photomask, a method of manufacturing a semiconductor structure, and a system for forming a semiconductor structure are provided. The method for cleaning a reflective photomask includes placing a photomask in a first chamber, and performing a dry cleaning operation on the photomask in the first chamber, wherein the dry cleaning operation includes providing hydrogen radicals to the first chamber, generating hydrocarbon gases as a result of reactions of the hydrogen radicals, and removing the hydrocarbon gases from the first chamber.
-
公开(公告)号：US11347143B2
公开(公告)日：2022-05-31
申请号：US16943881
申请日：2020-07-30
Inventor： Wu-Hung Ko , Chung-Hung Lin , Chih-Wei Wen
Abstract: A method for cleaning a reflective photomask is provided. The method includes: disposing the reflective photomask in a chamber; providing hydrogen radicals to the chamber; and exposing the reflective photomask to the hydrogen radicals. A method of manufacturing a semiconductor structure and system for forming a semiconductor structure are also provided.
-
Patent Agency Ranking
公开(公告)号：US08999610B2
公开(公告)日：2015-04-07
申请号：US13731420
申请日：2012-12-31
Inventor： Chien-Hsing Lu , Chung-Hung Lin , Chih-Wei Wen
IPC: G03F1/74
CPC classification number: G03F7/70866 , G03F1/74 , Y10S430/143
Abstract: A method includes performing a beam scan on a photolithography mask to repair the photolithography mask. After the beam scan, a radiation treatment is performed on the photolithography mask. The method is performed by an apparatus including a beam generator configured to generate and project a beam on the lithography mask, a radiation source configured to generate a radiation on the lithography mask, and a process gas source configured to release a process gas onto the lithography mask. The process as reacts with a surface portion of the lithography mask to repair the lithography mask. With the radiation treatment, residue process gas on the lithography mask is removed.
Abstract translation: 一种方法包括在光刻掩模上执行光束扫描以修复光刻掩模。 在光束扫描之后，对光刻掩模进行放射线处理。 该方法由包括被配置为在光刻掩模上生成和投影光束的光束发生器的设备执行，被配置为在光刻掩模上产生辐射的辐射源以及被配置为将处理气体释放到光刻上的处理气体源 面具。 该过程与光刻掩模的表面部分反应以修复光刻掩模。 通过辐射处理，去除光刻掩模上的残留处理气体。
-
7.发明授权公开(公告)号：US12009238B2
公开(公告)日：2024-06-11
申请号：US17364457
申请日：2021-06-30
Inventor： Po-Chien Huang , Chung-Hung Lin , Chih-Wei Wen
IPC: H01L21/673 , G03F1/62 , G03F1/66 , G03F7/00 , H01L21/033 , H01T23/00
CPC classification number: H01L21/67359 , G03F1/62 , G03F1/66 , G03F7/70716 , G03F7/70925 , H01L21/0337 , H01T23/00
Abstract: The present disclosure provides a method for fabricating a semiconductor structure, including disposing a mask at a first position in a first chamber, generating; a first plurality of ions toward the mask by an ionizer, forming a photoresist layer on a substrate, receiving the substrate in the first chamber, and exposing the photoresist layer with actinic radiation through the mask in the first chamber.
-
公开(公告)号：US11822231B2
公开(公告)日：2023-11-21
申请号：US17373695
申请日：2021-07-12
Inventor： Tzu Han Liu , Chih-Wei Wen , Chung-Hung Lin
CPC classification number: G03F1/64 , G03F7/70025 , G03F7/70916 , G03F7/70983
Abstract: A method for removing particles includes receiving a pellicle including a pellicle membrane, a pellicle frame and at least a particle disposed on the pellicle membrane, generating light beams to form an optical trap extending in a direction perpendicular to the pellicle membrane, and removing the particle from the pellicle membrane by the optical trap.
-
9.发明授权公开(公告)号：US11294275B2
公开(公告)日：2022-04-05
申请号：US17019238
申请日：2020-09-12
Inventor： Tzu Han Liu , Chih-Wei Wen , Chung-Hung Lin
Abstract: The present disclosure provides an apparatus for mounting a pellicle to a photomask, including a presser, a pellicle stage facing the presser, and a flexible material layer between the presser and the pellicle stage, wherein the flexible material layer includes a compartment filled with gas.
-
10.发明授权公开(公告)号：US11239001B2
公开(公告)日：2022-02-01
申请号：US16144540
申请日：2018-09-27
Inventor： Tzu Han Liu , Chih-Wei Wen , Chung-Hung Lin
Abstract: A method for generating extreme ultraviolet (EUV) radiation includes introducing a fuel droplet; applying a first laser beam to strike the fuel droplet at a location to generate EUV radiation and form a movable debris of the fuel droplet; and forming an energy field proximal to the location of the first laser beam strike to trap the movable debris. An EUV radiation source includes a fuel droplet generator, a first laser, a collector and an energy field. The fuel droplet generator is configured to provide a fuel droplet. The first laser is configured to generate a first laser beam to strike the fuel droplet at a location to generate EUV radiation and form a movable debris. The collector is configured to reflect the EUV radiation. The energy field is configured to trap the movable debris, wherein the energy field is proximal to the location of the first laser beam strike.
-
-
-
-
-
-
-
-
-
Search Results
20
records
(took 0.019 seconds)
