Invention Grant
- Patent Title: Temperature compensation circuit and semiconductor integrated circuit using the same
-
Application No.: US17881639Application Date: 2022-08-05
-
Publication No.: US11809207B2Publication Date: 2023-11-07
- Inventor: Masafumi Nakatani , Kimihisa Hiraga
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Taichung
- Agency: JCIPRNET
- Priority: JP 21149138 2021.09.14
- Main IPC: G05F3/30
- IPC: G05F3/30 ; G05F1/567

Abstract:
The disclosure provides a temperature compensation circuit that generates a temperature-compensated current and an integrated semiconductor circuit using the temperature compensation circuit. The temperature compensation circuit includes: a first PTAT current source which has a first emitter area ratio and generates a first current, the first current having a first temperature coefficient proportional to the absolute temperature; a second PTAT current source which has a second emitter area ratio and generates a second current, the second current having a second temperature coefficient proportional to the absolute temperature; an adjustment circuit which adjusts the current generated by the first PTAT current source; and a differential circuit which outputs the difference between the current adjusted by the adjustment circuit and the current generated by the second PTAT current source.
Public/Granted literature
- US20230084920A1 TEMPERATURE COMPENSATION CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT USING THE SAME Public/Granted day:2023-03-16
Information query
IPC分类: