Invention Grant
- Patent Title: Semiconductor device and power conversion device
-
Application No.: US17427676Application Date: 2019-04-11
-
Publication No.: US11842895B2Publication Date: 2023-12-12
- Inventor: Kohei Ebihara , Takaaki Tominaga
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: XSENSUS LLP
- International Application: PCT/JP2019/015723 2019.04.11
- International Announcement: WO2020/208761A 2020.10.15
- Date entered country: 2021-08-02
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/417 ; H01L29/06 ; H02M1/08 ; H01L23/29 ; H01L23/31 ; H01L29/16 ; H02M7/5387 ; H02P27/08
Abstract:
An SBD includes: a terminal well region formed to surround an active region; a field insulating film formed to cover part of the terminal well region; a surface electrode formed on a drift layer on an inner side in relation to the field insulating film and electrically connected to the terminal well region; a surface protection film covering an end portion on an outer side of the surface electrode; and a back surface electrode formed on a back surface of a single crystal substrate. An end portion of an outer side of the surface electrode in the corner portion of the terminal region is located on an inner side in relation to the end portion of the outer side of the surface electrode in a straight portion of a terminal region based on a position of an end portion of an outer side of the terminal well region.
Public/Granted literature
- US20220149163A1 SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE Public/Granted day:2022-05-12
Information query
IPC分类:
