Invention Grant
- Patent Title: Ferroelectric capacitors
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Application No.: US18072546Application Date: 2022-11-30
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Publication No.: US11856790B2Publication Date: 2023-12-26
- Inventor: Ashonita A. Chavan , Durai Vishak Nirmal Ramaswamy , Manuj Nahar
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- The original application number of the division: US16989218 2020.08.10
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H10B53/30 ; H01L21/28 ; H10B51/30 ; H01L21/02 ; H01L49/02 ; H01L29/49 ; H01L29/51 ; H01L29/66
Abstract:
A method used in forming an electronic component comprising conductive material and ferroelectric material comprises forming a non-ferroelectric metal oxide-comprising insulator material over a substrate. A composite stack comprising at least two different composition non-ferroelectric metal oxides is formed over the substrate. The composite stack has an overall conductivity of at least 1×102 Siemens/cm. The composite stack is used to render the non-ferroelectric metal oxide-comprising insulator material to be ferroelectric. Conductive material is formed over the composite stack and the insulator material. Ferroelectric capacitors and ferroelectric field effect transistors independent of method of manufacture are also disclosed.
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