Invention Grant
- Patent Title: Superlattice FINFET with tunable drive current capability
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Application No.: US16226162Application Date: 2018-12-19
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Publication No.: US11881511B2Publication Date: 2024-01-23
- Inventor: Nidhi Nidhi , Rahul Ramaswamy , Sansaptak Dasgupta , Han Wui Then , Marko Radosavljevic , Johann C. Rode , Paul B. Fischer , Walid M. Hafez
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe Williamson & Wyatt, P.C.
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/15 ; H01L29/205 ; H01L29/66 ; H01L29/78 ; H01L29/20
Abstract:
A transistor is disclosed. The transistor includes a substrate, a superlattice structure that includes a plurality of heterojunction channels, and a gate that extends to one of the plurality of heterojunction channels. The transistor also includes a source adjacent a first side of the superlattice structure and a drain adjacent a second side of the superlattice structure.
Information query
IPC分类:
