Invention Grant
- Patent Title: Method of forming vanadium nitride layer and structure including the vanadium nitride layer
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Application No.: US17113242Application Date: 2020-12-07
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Publication No.: US11885013B2Publication Date: 2024-01-30
- Inventor: Giuseppe Alessio Verni , Qi Xie , Henri Jussila , Charles Dezelah , Jiyeon Kim , Eric James Shero , Paul Ma
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer L.L.P.
- Main IPC: C23C16/34
- IPC: C23C16/34 ; C23C16/455 ; H01L29/43 ; C23C16/52

Abstract:
Methods and systems for depositing vanadium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium nitride layer onto a surface of the substrate. The cyclical deposition process can include providing a vanadium halide precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process.
Public/Granted literature
- US20210180184A1 METHOD OF FORMING VANADIUM NITRIDE LAYER AND STRUCTURE INCLUDING THE VANADIUM NITRIDE LAYER Public/Granted day:2021-06-17
Information query
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