A target block family of a plurality of block families is identified periodically every predetermined number of program erase cycles (PECs) of a memory device. Each block family includes a plurality of blocks. A respective temporal voltage shift of each block of a subset of blocks of the target block family from each die of a plurality of dies associated with the target block family is obtained. A respective die measurement for each respective die is obtained based on an average of the respective temporal voltage shifts of the subset of blocks from each die. Each respective die to a respective die family of a plurality of consecutive die families is assigned based on the respective die measurement for each respective die.