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公开(公告)号:US20240385926A1
公开(公告)日:2024-11-21
申请号:US18661526
申请日:2024-05-10
Applicant: Micron Technology, Inc.
Inventor: Steven Michael Kientz , Hyungseok Kim , Zixiang Loh , Patrick R. Khayat , Jun Wan
Abstract: A system having a processing device operatively coupled with a memory device to perform the following operations: responsive to detecting a triggering event, measuring a temperature of the memory device to obtain a suspend temperature value, enabling a suspend temperature flag to indicate that temperature input for a step of an error handling operation is based on the suspend temperature value. Updating an operating temperature with the suspend temperature value. Determining, using a data structure which maps temperatures to read level offsets, a read level offset for the step of the error handling operation, based on the operating temperature. Causing the step of the error handling operation to be performed on a set of cells using a read level value based on the read level offset and a base read level, an disabling the suspend temperature flag.
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公开(公告)号:US20240111445A1
公开(公告)日:2024-04-04
申请号:US18526634
申请日:2023-12-01
Applicant: Micron Technology, Inc.
Inventor: Michael Sheperek , Kishore Kumar Muchherla , Mustafa N. Kaynak , Vamsi Pavan Rayaprolu , Bruce A. Liikanen , Peter Feeley , Larry J. Koudele , Shane Nowell , Steven Michael Kientz
CPC classification number: G06F3/064 , G06F3/0604 , G06F3/0659 , G06F3/0673 , G06F12/10 , G11C16/26 , G11C16/0483
Abstract: An example memory sub-system includes a memory device and a processing device, operatively coupled to the memory device. The processing device is configured to initialize a block family associated with a memory device; initialize a timeout associated with the block family; initializing a low temperature and a high temperature using a reference temperature at the memory device; responsive to programming a block residing on the memory device, associate the block with the block family; and responsive to at least one of: detecting expiration of the timeout or determining that a difference between the high temperature and the low temperature is greater than or equal to a specified threshold temperature value, close the block family.
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公开(公告)号:US20240071440A1
公开(公告)日:2024-02-29
申请号:US17897438
申请日:2022-08-29
Applicant: Micron Technology, Inc.
Inventor: Robert W. Mason , Pitamber Shukla , Steven Michael Kientz
CPC classification number: G11C7/1096 , G11C7/1069 , G11C7/109 , G11C7/222
Abstract: Systems and methods are disclosed including a memory device and a processing device operatively coupled to the memory device. The processing device can perform operations including periodically, at a predefined frequency, incrementing a value stored in an accumulator by a composite parameter value; responsive to receiving a program request specifying a data item to be programmed to a management unit of the memory device, obtaining a first value from the accumulator; storing the first value to a program reference table; programming the data item to the management unit; responsive to receiving a read request specifying the management unit, obtaining a second value from the accumulator; determining a read voltage value based on a difference of the first value and the second value; and performing a read operation, using the read voltage value, on the management unit.
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公开(公告)号:US11914890B2
公开(公告)日:2024-02-27
申请号:US18168300
申请日:2023-02-13
Applicant: Micron Technology, Inc.
Inventor: Steven Michael Kientz , Vamsi Pavan Rayaprolu
IPC: G06F3/06
CPC classification number: G06F3/0655 , G06F3/0625 , G06F3/0679
Abstract: A memory sub-system to, in response to a power up, executing a first loading process to load a sequence of a set of trim values into one or more registers of the memory sub-system. In response to a request to execute a memory access operation, interrupting the first loading process. A second loading process including loading a portion of the set of trim values corresponding to the request is executed. The memory access operation is executed using the portion of the set of trim values loaded into the one or more registers during the second loading process. Following execution of the memory access operation, the first loading process is resumed to load one or more unloaded trim values of the sequence of trim values.
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公开(公告)号:US11854649B2
公开(公告)日:2023-12-26
申请号:US17675592
申请日:2022-02-18
Applicant: Micron Technology, Inc.
Inventor: Patrick R. Khayat , Steven Michael Kientz , Sivagnanam Parthasarathy , Mustafa N. Kaynak , Vamsi Pavan Rayaprolu
Abstract: A processing device in a memory sub-system monitors a temperature associated with a block of a memory device, the block comprising a plurality of wordlines. The processing device further determines a first amount of time between when memory cells associated with a first wordline of the plurality of wordlines of the block were written and when memory cells associated with a last wordline of the plurality of wordlines of the block were written. That first amount of time is normalized according to the temperature associated with the block. The processing device further determines, based at last in part on the first amount of time and on an associated scaling factor, an estimate of when the block will reach a uniform charge loss state.
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公开(公告)号:US20230393745A1
公开(公告)日:2023-12-07
申请号:US17856771
申请日:2022-07-01
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Steven Michael Kientz
IPC: G06F3/06
CPC classification number: G06F3/0611 , G06F3/0679 , G06F3/0653
Abstract: A target block family of a plurality of block families is identified periodically every predetermined number of program erase cycles (PECs) of a memory device. Each block family includes a plurality of blocks. A respective temporal voltage shift of each block of a subset of blocks of the target block family from each die of a plurality of dies associated with the target block family is obtained. A respective die measurement for each respective die is obtained based on an average of the respective temporal voltage shifts of the subset of blocks from each die. Each respective die to a respective die family of a plurality of consecutive die families is assigned based on the respective die measurement for each respective die.
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公开(公告)号:US20230266901A1
公开(公告)日:2023-08-24
申请号:US17675624
申请日:2022-02-18
Applicant: Micron Technology, Inc.
Inventor: Patrick R. Khayat , Steven Michael Kientz , Sivagnanam Parthasarathy , Mustafa N. Kaynak , Vamsi Pavan Rayaprolu
IPC: G06F3/06
CPC classification number: G06F3/064 , G06F3/0625 , G06F3/0679
Abstract: A processing device in a memory sub-system detects an occurrence of a triggering event, determines respective levels of charge loss associated with a first representative wordline of a block of a memory device and with a second representative wordline of the block of the memory device, and determines whether a difference between the respective levels of charge loss satisfies a threshold criterion. Responsive to determining that the difference between the respective levels of charge loss satisfies the threshold criterion, the processing device further determines that the block is in a uniform charge loss state.
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公开(公告)号:US11705193B2
公开(公告)日:2023-07-18
申请号:US17164636
申请日:2021-02-01
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Shane Nowell , Steven Michael Kientz , Michael Sheperek , Mustafa N Kaynak , Kishore Kumar Muchherla , Larry J Koudele , Bruce A Liikanen
CPC classification number: G11C11/5642 , G11C11/5628 , G11C16/10 , G11C16/26 , G11C16/30
Abstract: A method can include receiving a request to read data from a memory cell of a memory device coupled with the processing device, determining a voltage distribution parameter value associated with the memory cell, determining a set of read levels associated with the voltage distribution parameter value, wherein each read level in the determined set of read levels corresponds to a respective voltage distribution of the memory cell, and reading, using the determined set of read levels, data from the memory cell. The voltage distribution parameter value can be determined by identifying a particular voltage distribution of the memory cell by sampling the memory cell at a plurality of voltage levels, and determining the voltage distribution parameter value based on the particular voltage distribution. The voltage distribution parameter value can be a voltage value that is included in the particular voltage distribution.
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公开(公告)号:US20230153003A1
公开(公告)日:2023-05-18
申请号:US18098439
申请日:2023-01-18
Applicant: Micron Technology, Inc.
Inventor: Michael Sheperek , Larry J. Koudele , Bruce A. Liikanen , Steven Michael Kientz , Kishore Kumar Muchherla
IPC: G06F3/06 , G01K3/04 , G06F1/324 , G06F1/3228
CPC classification number: G06F3/064 , G06F3/0604 , G06F3/0659 , G01K3/04 , G06F1/324 , G06F1/3228 , G06F3/0679
Abstract: A system includes a memory device and a processing device to initialize a block family associated with the memory device and a timer at initialization of the block family. The processing device further stores, in non-volatile memory of the memory device, a value of the timer before powering down the system while the block family is still open. The processing device further detects a power on of the system and measures a data state metric associated with one or more memory cell of a page of the memory device that is associated with the block family. The processing device further compares a level of the data state metric to a temporal voltage shift function to estimate a time after program value of the page and increments the value of the timer, restored from the non-volatile memory, based on the time after program value.
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公开(公告)号:US11636913B2
公开(公告)日:2023-04-25
申请号:US17301350
申请日:2021-03-31
Applicant: Micron Technology, Inc.
Inventor: Michael Sheperek , Bruce A. Liikanen , Steven Michael Kientz
Abstract: Disclosed is a system that comprises a memory device and a processing device, operatively coupled with the memory device, to perform operations that include, responsive to detecting a triggering event, selecting a family of memory blocks of the memory device, the selected family being associated with a set of bins, each bin associated with a plurality of read voltage offsets to be applied to base read voltages during read operations. The operations performed by the processing device further include calibration operations to determine data state metric values characterizing application of read voltage offsets of various bins. The operations performed by the processing device further include identifying, based on the determined data state metrics, a target bin and associating the selected family with the target bin.
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